a d v a n c e d s e m i c o n d u c t o r, i n c. rev. a 7525 ethel avenue ? north hollywood, ca 91605 ? (818) 982-1200 ? fax (818) 765-3004 1/1 specifications are subjec t to change without notice. characteristics t c = 25 c symbol none test conditions minimum typical maximum units bv cbo i c = 50 ma 65 v bv cer i c = 50 ma r be = 10 ? 65 v bv ebo i e = 4.0 ma 3.5 v i ces v ce = 50 v 6.0 ma h fe v ce = 5.0 v i c = 1.0 a 10 --- p g c v cc = 50 v p in = 9.0 w f = 1090 mhz 9.2 48 9.7 56 db % pulse width = 32 sec, duty cycle = 2% npn silicon rf power transistor AM1011-075 description: the asi AM1011-075 is a high power class c transistor designed for l-band avionics pulse output and driver applications. features: ? internal input/output matching networks ? p g = 9.2 db min. at 75 w/1090 mhz ? omnigold ? metalization system maximum ratings i c 5.4 a v cc 55 v p diss 175 w @ t c = 25 c t j -65 c to +250 c t stg -65 c to +200 c jc 0.86 c/w package style .400 2l flg (a) minimum inches / mm .100 / 2.54 .376 / 9.55 .050 / 1.27 .110 / 2.79 b c d e f g a maximum .120 / 3.05 .130 / 3.30 .396 / 10.06 inches / mm .193 / 4.90 h dim k l i j .490 / 12.45 .690 / 17.53 .003 / 0.08 .510 / 12.95 .710 / 18.03 .006 / 0.18 n m .118 / 3.00 .131 / 3.33 .135 / 3.43 .145 / 3.68 .072 / 1.83 .052 / 1.32 p .230 / 5.84 g c n 2xr 4x .062 x 45 i e p m f l h j k 2xb d .040 x 45 a .100 / 2.54 .395 / 10.03 .407 / 10.34 .890 / 22.61 .910 / 23.11
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